ds30149 rev. 9 - 2 1 of 3 bss84 www.diodes.com diodes incorporated characteristic symbol value units drain-source voltage v dss -50 v drain-gate voltage r gs 20k v dgr -50 v gate-source voltage continuous v gss 20 v drain current (note 1) continuous i d -130 ma total power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient r ja 417 c/w operating and storage temperature range t j ,t stg -55 to +150 c case: sot-23 case material: ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 5, on page 2 terminal connections: see diagram marking (see page 2): k84 ordering & date code information: see page 2 weight: 0.008 grams (approx.) mechanical data a e j l top view m b c h g d k d g s electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 2) drain-source breakdown voltage bv dss -50 v v gs = 0v, i d = -250a zero gate voltage drain current i dss -15 -60 -100 a a na v ds = -50v, v gs = 0v, t j = 25 c v ds = -50v, v gs = 0v, t j = 125 c v ds = -25v, v gs = 0v, t j = 25 c gate-body leakage i gss 10 na v gs = 20v, v ds = 0v on characteristics (note 2) gate threshold voltage v gs(th) -0.8 -2.0 v v ds =v gs , i d = -1ma static drain-source on-resistance r ds (on) 10 v gs = -5v, i d = -0.100a forward transconductance g fs 0.05 s v ds = -25v, i d = -0.1a dynamic characteristics input capacitance c iss 45 pf v ds = -25v, v gs = 0v f = 1.0mhz output capacitance c oss 25 pf reverse transfer capacitance c rss 12 pf switching characteristics turn-on delay time t d(on) 10 ns v dd = -30v, i d = -0.27a, r gen = 50 , v gs = -10v turn-off delay time t d(off) 18 ns note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. short duration test pulse used to minimize self-heating effect. 3. no purposefully added lead. source gate d ra i n sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm maximum ratings @ t a = 25 c unless otherwise specified bss84 p-channel enhancement mode field effect transistor features low on-resistance low gate threshold voltage low input capacitance fast switching speed low input/output leakage available in lead free/rohs compliant version (note 3)
ds30149 rev. 9 - 2 2 of 3 bss84 www.diodes.com month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key k84 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september k84 ym marking information notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free/rohs compliant version part number, please add "-f" suffix to part number above. example: bss84-7-f. device packaging shipping bss84-7 sot-23 3000/tape & reel ordering information (note 4) year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 250 300 350 0 0 - 600 -500 -400 -300 -200 -100 0 -2 -1 -5 -4 -3 i , drain source current (ma) d v , drain source (v) ds fig. 2, drain source current vs. drain source volta g e t = 25 c a v= -5v gs -4.5v -3.5v -3.0v -2.5v
ds30149 rev. 9 - 2 3 of 3 bss84 www.diodes.com 0.0 - 1 . 0 -0.8 -0.6 -0.4 -0.2 0 -2 -3 -4 -1 -8 -7 -6 -5 i , drain current (a) d v , gate-to-source voltage (v) gs fi g . 3, drain current vs. gate source volta g e t = -55 c a t = 25 c a t= 125 c a 0 1 2 4 5 3 6 8 7 10 9 0 -1 -2 -3 -4 -5 v , gate to source (v) gs fi g . 4, on resistance vs. gate source volta g e t = 25 c a t = 125 c a 0.0 5.0 10.0 0.0 -0.2 -0.4 -0.6 -0.8 1.0 i , drain current (a) d fi g . 6, on-resistance vs. drain current 15.0 20.0 2 5. 0 v = -8v gs v = -10v gs v = -3v gs v= -3.5v gs v = -4v gs v = -4.5v gs v = -6v gs v = -5v gs 0 3 6 9 12 1 5 -50 -25 0 25 50 125 100 75 150 t , junction temperature (c) j fi g . 5, on-resistance vs. junction temperature v=-10v gs i = -0.13a d
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